Rb1 B1 O3

semiconductor

· Rb1 B1 O3

Rb1B1O3 is an experimental oxide semiconductor compound combining rubidium, boron, and oxygen in a 1:1:3 stoichiometric ratio. This material belongs to the family of metal borate semiconductors, which are primarily investigated in research settings for potential applications in optoelectronics, photocatalysis, and solid-state ionics rather than established commercial use. The material's semiconductor behavior and crystal structure make it of interest to researchers exploring alternative wide-bandgap semiconductors and functional ceramics, though practical applications remain largely underdeveloped compared to mature semiconductor platforms.

research and developmentphotocatalytic materialsoptoelectronic devices (experimental)solid-state ionicsfunctional ceramicswide-bandgap semiconductors (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	18,999.9	ksi	—
Shear Modulus(G)	6,361.4	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02220	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4250	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 B1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control