PtNbO2N

semiconductor

· PtNbO2N

PtNbO2N is an experimental oxynitride semiconductor combining platinum, niobium, oxygen, and nitrogen in a mixed-anion crystal structure. This material is primarily explored in photocatalysis and electrochemistry research, where the nitrogen doping and platinum incorporation aim to enhance visible-light absorption and catalytic activity compared to conventional metal oxides like TiO2. As an early-stage research compound, it represents the broader class of transition metal oxynitrides being developed to overcome bandgap and charge-carrier limitations in environmental remediation and energy conversion applications.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediation (pollutant degradation)electrochemical CO2 reductionhydrogen generationresearch/laboratory scale

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5000	eV	—
Magnetic Moment(μB)	-0.00000108	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PtNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control