PtInO2N

semiconductor

· PtInO2N

PtInO2N is an experimental oxynitride semiconductor combining platinum, indium, oxygen, and nitrogen phases. This material is primarily being developed in photocatalysis and photoelectrochemical research contexts, where its mixed-anion structure offers tunable bandgap and enhanced charge carrier dynamics compared to conventional binary oxides or nitrides. The platinum dopant can improve electron conduction and catalytic activity, making it of interest for hydrogen generation, pollutant degradation, and energy conversion applications where visible-light-responsive semiconductors are needed.

photocatalysis researchphotoelectrochemical water splittingenvironmental remediationvisible-light photocatalystssemiconductor thin filmsemerging energy technologies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	-0.5638	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.360	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PtInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control