Pr3 Ga1 C1

semiconductor

· Pr3 Ga1 C1

Pr₃GaC is an intermetallic carbide compound composed of praseodymium, gallium, and carbon, belonging to the rare-earth metallic carbide family. This is a research-phase material with potential applications in high-temperature structural applications and electronic devices, though it remains primarily in laboratory investigation rather than established industrial production. The material's combination of rare-earth and light metallic elements suggests possible utility in specialized aerospace, electronics, or quantum materials research where conventional carbides or intermetallics are insufficient.

experimental semiconductor researchhigh-temperature structural compoundsrare-earth intermetallicsquantum materials developmentadvanced electronics (exploratory)materials physics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	5,617.7	ksi	—
Shear Modulus(G)	2,857.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00980	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.181	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pr3 Ga1 C1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control