Pr₂N₂ is a rare-earth nitride semiconductor compound composed of praseodymium and nitrogen, belonging to the family of lanthanide nitrides being investigated for advanced electronic and optoelectronic applications. This material is primarily of research interest rather than established commercial production, with potential applications in high-temperature electronics, wide-bandgap devices, and specialized photonic systems where rare-earth compounds offer unique electronic properties distinct from conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 76.77 | GPa | — | ||
Shear Modulus(G) | 19.80 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.079 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.198 | eV/atom | — |