Pr1 Bi2 I1 O4

semiconductor
· Pr1 Bi2 I1 O4

Pr₁Bi₂I₁O₄ is a mixed-valence iodide-oxide semiconductor combining praseodymium, bismuth, iodine, and oxygen in a layered crystal structure. This is a research-phase compound primarily investigated for photovoltaic and optoelectronic applications, particularly as a lead-free halide perovskite alternative or perovskite-related material that aims to combine the band-gap tunability of halide perovskites with enhanced stability through heavy-metal-free or reduced-toxicity compositions. The bismuth-iodine framework offers potential advantages in visible-light absorption and defect tolerance compared to conventional silicon or cadmium telluride semiconductors, though it remains largely in fundamental studies rather than commercialized production.

photovoltaic solar cellslead-free semiconductor researchoptoelectronic devicesthin-film absorption layersperovskite alternativesstability-enhanced halide semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.