Pr1 Bi2 Br1 O4
semiconductorPr₁Bi₂Br₁O₄ is an experimental mixed-halide oxide semiconductor combining praseodymium, bismuth, bromine, and oxygen—a composition that falls within the emerging class of halide perovskites and related layered oxide structures. This material is primarily of research interest for optoelectronic and photonic applications, where the combination of heavy elements (Bi, Pr) and halide chemistry offers potential for tunable bandgaps, luminescence, or photocatalytic activity. While not yet established in high-volume industrial production, compounds in this family are being investigated as alternatives to conventional semiconductors for next-generation devices where conventional materials face limitations in performance or environmental compatibility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |