Pr₁Bi₁O₃ is a mixed-metal oxide semiconductor compound combining praseodymium (a rare-earth element) with bismuth in a 1:1 stoichiometric ratio. This material belongs to the family of perovskite-related oxides and is primarily of research and developmental interest rather than established commercial production. Potential applications leverage the electronic and photocatalytic properties typical of bismuth-containing oxides, with interest in photocatalysis, optoelectronics, and solid-state device research where rare-earth doping can tune bandgap and carrier dynamics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.675 | eV/atom | — |