PdWON2

semiconductor

· PdWON2

PdWON2 is a ternary compound semiconductor composed of palladium, tungsten, oxygen, and nitrogen elements, representing an emerging material in the transition metal oxynitride family. This material is primarily of research interest for next-generation optoelectronic and electrochemical applications, where its mixed-metal composition and nitrogen doping are expected to offer improved band gap engineering, charge carrier mobility, and catalytic properties compared to binary oxides or nitrides alone. The incorporation of palladium with tungsten oxynitride may provide pathways for enhanced photocatalysis, electrocatalysis, or thin-film semiconductor device applications in nascent technologies.

photocatalytic deviceselectrochemical sensorsthin-film semiconductorshydrogen evolution catalysisresearch/early-stage developmentvisible-light photocatalysts

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	0.00175	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PdWON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control