PdSe2 is a layered transition metal dichalcogenide (TMD) semiconductor composed of palladium and selenium, belonging to the family of two-dimensional materials with a van der Waals structure. Currently in the research and development phase rather than established industrial production, PdSe2 is being investigated for next-generation electronic and optoelectronic devices due to its semiconducting properties, tunable bandgap, and potential for integration into flexible or atomically-thin device architectures. Engineers and researchers are exploring this material as an alternative to conventional semiconductors for applications requiring high carrier mobility, layer-dependent electronic behavior, or integration into heterostructure devices where traditional bulk materials are impractical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 22.53 | GPa | — | ||
| ↳ | 58.37 | GPa | — | ||
Exfoliation Energy(Eexf) | 166.2 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G)2 entries | 14.48 | GPa | — | ||
| ↳ | 27.94 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.627 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 14.40 | - | — | ||
| ↳ | 28.85 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -37.11 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04520 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2585 | eV/atom | — |