Palladium oxide (PdO) is a p-type semiconductor compound commonly used in gas sensing applications, catalysis, and thin-film electronic devices. The material is widely employed in palladium-based hydrogen sensors, oxygen sensors, and catalytic converters due to its strong interaction with gases and excellent electrochemical properties. PdO is also investigated for resistive switching memory devices and as a component in advanced functional coatings, where its semiconductor characteristics and chemical reactivity make it particularly valuable in environments requiring selective gas detection or catalytic performance at moderate temperatures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 23,115.4 | ksi | — | ||
| ↳ | 27,538.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.4400 | - | — | ||
Shear Modulus(G)2 entries | 4,916.5 | ksi | — | ||
| ↳ | -246.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3337 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.8000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8167 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5985 | eV/atom | — | ||
| ↳ | 0.2250 | eV/atom | — |