PdGaN3 — Properties & Data | MatWorld

PdGaN3

ceramic

· PdGaN3

PdGaN3 is a palladium-gallium nitride ceramic compound, representing a transition-metal-doped wide-bandgap semiconductor material. This is primarily a research-phase compound being investigated for high-temperature, high-power, and radiation-resistant electronic and optoelectronic applications where conventional GaN devices reach their limits. The palladium doping modifies the electronic properties of the gallium nitride matrix, making it of interest for extreme-environment sensing, power conversion, and potentially advanced optical devices where thermal stability and reduced defect sensitivity are critical.

High-temperature power electronicsRadiation-hardened semiconductorsWide-bandgap device researchExtreme-environment sensorsNext-generation RF/microwave components

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.1121	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PdGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental