PbVO2N

semiconductor

· PbVO2N

PbVO2N is a lead vanadium oxynitride semiconductor compound belonging to the transition metal oxynitride family. Research on this material remains largely exploratory, focusing on its potential as a photocatalytic or optoelectronic material given the combination of lead, vanadium, and nitrogen in its structure. Interest in such oxynitrides centers on engineering bandgaps and enhancing light absorption for energy conversion applications, though industrial adoption remains limited and the material is primarily investigated in academic and laboratory settings.

photocatalysis researchoptoelectronic device developmentvisible-light absorberssemiconductor thin filmsmaterials science R&Denergy conversion studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	0.08916	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbVO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control