PbTaO2N

semiconductor

· PbTaO2N

PbTaO₂N is a mixed-anion oxynitride semiconductor combining lead, tantalum, oxygen, and nitrogen in a single crystalline phase. This is an experimental research material developed to engineer the bandgap and electronic properties of tantalum-based semiconductors for photocatalytic applications. The nitrogen incorporation narrows the bandgap compared to oxide-only analogues, making it potentially useful for visible-light photocatalysis, though it remains largely in the development phase with limited commercial deployment.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediationsolar energy conversionresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.000	eV	—
Magnetic Moment(μB)	-0.000118	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control