PbTaO2N
semiconductor· PbTaO2N
PbTaO₂N is a mixed-anion oxynitride semiconductor combining lead, tantalum, oxygen, and nitrogen in a single crystalline phase. This is an experimental research material developed to engineer the bandgap and electronic properties of tantalum-based semiconductors for photocatalytic applications. The nitrogen incorporation narrows the bandgap compared to oxide-only analogues, making it potentially useful for visible-light photocatalysis, though it remains largely in the development phase with limited commercial deployment.
photocatalytic water splittingvisible-light photocatalysisenvironmental remediationsolar energy conversionresearch semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.