PbSiO2S

semiconductor

· PbSiO2S

PbSiO₂S is an experimental lead-based mixed-anion semiconductor compound combining silicate and sulfide chemistry, representing an emerging class of materials explored for narrow-bandgap and photovoltaic applications. This compound family is primarily investigated in research settings for optoelectronic devices and solar energy conversion, where the combination of lead, silicon, oxygen, and sulfur creates unique electronic properties distinct from conventional binary semiconductors. Its notable advantage lies in potential tunability of the bandgap through compositional variation, though lead-based semiconductors face regulatory and toxicity constraints that limit commercialization compared to lead-free alternatives like tin chalcogenides.

photovoltaic researchoptoelectronic devicesnarrow-bandgap semiconductorssolar cell developmentinfrared detection (research phase)materials screening for next-gen electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—
Magnetic Moment(μB)	-0.0000363	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbSiO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control