PbSe0.99S0.01

semiconductor

· PbSe0.99S0.01

PbSe0.99S0.01 is a lead chalcogenide semiconductor alloy—a near-stoichiometric lead selenide with minimal sulfur substitution—belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily explored in research and specialized applications requiring narrow-bandgap semiconductors, particularly for infrared detection and thermoelectric devices operating in the mid-infrared region. The sulfur doping modulates the bandgap and electronic properties relative to pure PbSe, making it relevant for tuning performance in thermal imaging systems and waste-heat recovery applications where lead selenide-based materials compete with alternatives like HgCdTe or InSb.

infrared detectors and thermal imagingthermoelectric power generationnarrow-bandgap semiconductor researchmid-infrared optoelectronicsbandgap engineering and doping studiescryogenic and room-temperature sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbSe0.99S0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control