PbNbO2N

semiconductor

· PbNbO2N

PbNbO2N is an oxynitride semiconductor compound combining lead, niobium, oxygen, and nitrogen in a perovskite-related crystal structure. This is an emerging research material being investigated for photocatalytic and optoelectronic applications, where the nitrogen incorporation into the niobate framework is designed to narrow the bandgap compared to conventional oxide ceramics, enabling visible-light activity. The material belongs to the family of metal oxynitride semiconductors, which represent a frontier in catalysis and energy conversion research but remain largely pre-commercialization; it is notable for potential advantages in water splitting, pollutant degradation, and photoelectrochemical devices where traditional wide-bandgap oxides are insufficient.

photocatalytic water splittingenvironmental remediationphotoelectrochemical cellsvisible-light photocatalysisresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	0.0000434	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control