PbNbO2N
semiconductorPbNbO2N is an oxynitride semiconductor compound combining lead, niobium, oxygen, and nitrogen in a perovskite-related crystal structure. This is an emerging research material being investigated for photocatalytic and optoelectronic applications, where the nitrogen incorporation into the niobate framework is designed to narrow the bandgap compared to conventional oxide ceramics, enabling visible-light activity. The material belongs to the family of metal oxynitride semiconductors, which represent a frontier in catalysis and energy conversion research but remain largely pre-commercialization; it is notable for potential advantages in water splitting, pollutant degradation, and photoelectrochemical devices where traditional wide-bandgap oxides are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |