PbInO2N is a lead-indium oxynitride ceramic compound combining metallic and nonmetallic elements in a mixed-valence oxide-nitride structure. This is primarily a research material under investigation for optoelectronic and photocatalytic applications, particularly in visible-light-responsive systems where the nitrogen incorporation modifies the band gap relative to conventional lead-indium oxides. Its potential lies in photocatalysis, solar energy conversion, or advanced semiconductor applications where engineered band structures are critical, though industrial adoption remains limited and material synthesis and property reproducibility are active research areas.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.994 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.060 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data