PbInN3 — Properties & Data | MatWorld

PbInN3

ceramic

· PbInN3

PbInN3 is a lead-indium nitride ceramic compound, representing an experimental material within the broader family of metal nitride ceramics. This compound is primarily of research interest for advanced semiconductor and optoelectronic applications, where the combination of lead and indium with nitrogen bonding is being investigated for potential bandgap engineering and electronic property tuning. While not yet established in mainstream industrial production, materials in this family are being explored for next-generation light-emission devices, high-power electronics, and specialized semiconductor heterostructures where conventional III-V nitrides may have limitations.

experimental semiconductorsoptoelectronic researchbandgap engineeringhigh-power electronics developmentadvanced ceramic compounds

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.820	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PbInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental