Pb₅S₂I₆ is a mixed-halide perovskite semiconductor composed of lead, sulfur, and iodine. This is primarily a research compound rather than an established commercial material, investigated for optoelectronic and photovoltaic applications where tunable bandgap and solution-processability are desired. The material belongs to the broader family of halide perovskites being explored as an alternative to conventional silicon in next-generation solar cells, light emitters, and radiation detectors, with potential advantages in cost and manufacturing flexibility compared to traditional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.99 | GPa | — | ||
Shear Modulus(G) | 10.47 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.805 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6430 | eV/atom | — |