Pb3B3O10N

semiconductor

· Pb3B3O10N

Pb3B3O10N is an experimental lead borate nitride semiconductor compound combining lead, boron, oxygen, and nitrogen in a novel crystal structure. This material belongs to the oxynitride ceramic family and represents research-phase development for potential wide-bandgap semiconductor applications where traditional materials face limitations. Its primary interest lies in high-temperature electronics, UV detection, and next-generation power conversion systems where the combination of lead's electronic properties with boron's structural role offers possibilities distinct from conventional semiconductors like silicon or wide-bandgap compounds (GaN, SiC).

Research and development phaseHigh-temperature semiconductorsUV detection devicesPower electronics prototypingNext-generation optoelectronicsWide-bandgap applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.640	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb3B3O10N

Electrical Properties

Regulatory Screening

Environmental

Export Control