Pb2 Se4
semiconductorPb₂Se₄ is a lead selenide compound semiconductor belonging to the IV-VI narrow-bandgap semiconductor family, typically studied in research contexts for infrared detection and thermal imaging applications. This material is of primary interest in advanced optoelectronic device development, where its narrow bandgap makes it suitable for mid- and long-wavelength infrared sensing at cryogenic or thermoelectrically cooled temperatures. While not widely deployed in volume production compared to established alternatives like mercury cadmium telluride (HgCdTe), lead selenide compounds offer potential advantages in lattice matching for heterostructure devices and are actively investigated for cost-effective infrared focal plane arrays and thermal cameras in defense, scientific instrumentation, and emerging civilian thermal sensing markets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |