Pb₂S₂ is a lead sulfide semiconductor compound that exists in a layered crystal structure, representing a member of the metal chalcogenide family. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its narrow bandgap and layered structure make it potentially useful for infrared detection, solar energy conversion, and advanced electronic devices. While not yet widely commercialized compared to traditional semiconductors like silicon or gallium arsenide, Pb₂S₂ and related lead chalcogenides attract attention in materials science for their tunable electronic properties and potential in next-generation thin-film technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,073.8 | ksi | — | ||
Shear Modulus(G) | 4,008.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2782 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5750 | eV/atom | — |