Pb1Se0.9S0.1

semiconductor

· Pb1Se0.9S0.1

Pb₁Se₀.₉S₀.₁ is a ternary lead chalcogenide semiconductor formed by alloying lead selenide (PbSe) with a small fraction of lead sulfide (PbS). This mixed-anion compound belongs to the narrow-bandgap semiconductor family and is primarily of research and specialized industrial interest for infrared applications where tuning the bandgap between PbSe and PbS compositions offers performance advantages. The material is used in infrared detectors and thermal imaging systems where its narrow bandgap enables sensitivity in the mid- to far-infrared spectrum, and the sulfide doping modulates optical and electronic properties compared to pure PbSe.

infrared detectorsthermal imaging sensorsmid-wave IR optoelectronicsphotovoltaic researchlead chalcogenide alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2700	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb1Se0.9S0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control