Pb1Se0.99S0.01

semiconductor

· Pb1Se0.99S0.01

Pb₁Se₀.₉₉S₀.₀₁ is a narrow-bandgap IV-VI semiconductor alloy composed primarily of lead selenide (PbSe) with a minor sulfur substitution on the selenium sublattice. This material belongs to the lead chalcogenide family, which are well-established thermoelectric and infrared-sensitive semiconductors. The sulfur doping modifies the electronic structure and bandgap of PbSe, making it relevant for mid-infrared detection, thermoelectric power generation, and specialized optoelectronic applications where tuned bandgap and carrier concentration are critical.

infrared detectorsthermoelectric generatorsthermal imaging sensorsmid-IR optoelectronicsbandgap engineeringresearch/development materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2600	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb1Se0.99S0.01

Electrical Properties

Regulatory Screening

Environmental

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