Pb1Se0.01S0.99

semiconductor
· Pb1Se0.01S0.99

Pb₁Se₀.₀₁S₀.₉₉ is a lead chalcogenide semiconductor alloy—a heavily sulfur-doped lead selenide compound that sits within the IV-VI narrow bandgap semiconductor family. This is a research-phase material explored for infrared sensing and thermal imaging applications, where the precise selenium-to-sulfur ratio is engineered to tune bandgap and carrier transport properties for operation in the mid-to-long-wavelength infrared spectrum. The strong sulfur content (99%) relative to selenium introduces lattice strain and modifies electronic structure compared to pure PbS or PbSe, making it relevant for tunable IR detectors, thermal cameras, and potentially advanced thermoelectric devices where bandgap engineering and carrier mobility optimization are critical.

infrared detectorsthermal imaging sensorsnarrow-bandgap semiconductorsbandgap engineering researchIR optoelectronicsthermoelectric applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.