Lead selenide (PbSe) is a narrow-bandgap semiconductor compound from the IV-VI material family, typically used in infrared detection and thermoelectric applications. This material is valued in thermal imaging systems, infrared sensors, and mid-wave to long-wave infrared photodetectors where its direct bandgap and high carrier mobility enable sensitive detection at room temperature or with modest cooling. Engineers select PbSe over alternatives like HgCdTe or InSb when cost-effectiveness, manufacturability, and performance in the 3–5 μm infrared window are balanced priorities, though it remains less common in high-volume consumer applications compared to cooled detectors in scientific and military markets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 52.67 | GPa | — | ||
Shear Modulus(G) | 17.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3720 | eV/atom | — |