Pb0.9Sn0.1Te

semiconductor

· Pb0.9Sn0.1Te

Pb0.9Sn0.1Te is a lead-tin telluride alloy, a narrow-bandgap semiconductor belonging to the IV-VI compound family. This material is primarily investigated for infrared detection and thermal imaging applications, where its bandgap tuning through tin alloying enables sensitivity across mid- to long-wave infrared regions. Lead telluride-based alloys are notable alternatives to III-V semiconductors (like HgCdTe) for uncooled or lightly cooled IR detectors because of their favorable narrow-gap characteristics and potential for cost-effective detector fabrication.

infrared detectorsthermal imaging sensorsnight vision systemstemperature measurement devicesspectroscopy applicationsresearch-phase semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.9Sn0.1Te

Electrical Properties

Regulatory Screening

Environmental

Export Control