Pb0.9Se0.9Sn0.1Se0.1
semiconductorPb0.9Se0.9Sn0.1Se0.1 is a lead-tin selenide compound semiconductor alloy, a quaternary system based on the PbSe-SnSe binary system with tin substitution for lead. This material belongs to the IV-VI narrow bandgap semiconductor family and is primarily explored in research contexts for infrared detection and thermoelectric applications, where the alloying strategy is used to tune bandgap and carrier transport properties relative to parent PbSe and SnSe compounds. The controlled substitution of tin enables optimization for mid- to long-wavelength infrared sensing and high-temperature thermal energy conversion, making it of interest to developers working in the 3–15 μm detection window or next-generation waste-heat recovery systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |