Pb0.99TeTl0.01

semiconductor

· Pb0.99TeTl0.01

Pb0.99TeTl0.01 is a lead telluride (PbTe) semiconductor doped with thallium, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily explored for infrared detection and thermoelectric energy conversion applications, where its narrow bandgap and carrier mobility make it valuable for mid-wavelength infrared (MWIR) sensing at cryogenic or thermoelectrically cooled temperatures. The thallium doping modifies electronic properties to tune bandgap and carrier concentration, offering tailored performance for specific detector wavelengths and thermal efficiency in power generation systems.

infrared detectorsMWIR imaging sensorsthermoelectric power generationcryogenic thermal sensorsradiation detectionresearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5900	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.99TeTl0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control