Pb0.99TeIn0.01

semiconductor

· Pb0.99TeIn0.01

Pb0.99TeIn0.01 is a lead telluride-based semiconductor alloy with indium doping, belonging to the narrow-bandgap IV-VI semiconductor family. This material is primarily investigated for infrared detection and thermal imaging applications, where its narrow bandgap enables sensitivity to mid- and long-wavelength infrared radiation. Lead telluride compounds are well-established in high-performance infrared detector arrays and thermoelectric applications, and indium doping is used to tailor electrical and optical properties; this specific composition represents a research-stage variant optimized for specialized IR sensing or thermal management where conventional PbTe may require modification.

infrared detectorsthermal imaging sensorsthermoelectric devicesnarrow-bandgap semiconductorsmaterials researchcryogenic sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5300	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.99TeIn0.01

Electrical Properties

Regulatory Screening

Environmental

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