Pb0.99Sn0.01Te

semiconductor

· Pb0.99Sn0.01Te

Pb₀.₉₉Sn₀.₀₁Te is a tin-doped lead telluride alloy, a narrow-bandgap semiconductor compound belonging to the IV-VI group of materials. This composition represents a fine-tuned variant of PbTe, with minimal tin substitution used to engineer electronic properties for mid-infrared applications. Lead telluride and its doped variants are well-established materials in infrared detector technology and thermoelectric applications, where the small tin addition modulates carrier concentration and bandgap energy to optimize performance for specific wavelength ranges or temperature windows.

infrared photodetectorsthermal imaging sensorsthermoelectric cooling/power generationmid-infrared spectroscopycryogenic detector applicationsradiation detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.99Sn0.01Te

Electrical Properties

Regulatory Screening

Environmental

Export Control