Pb0.99Sn0.01Se

semiconductor

· Pb0.99Sn0.01Se

Pb0.99Sn0.01Se is a tin-doped lead selenide compound, a narrow-bandgap semiconductor belonging to the IV-VI material family. This material is engineered for infrared detection and thermal imaging applications, where the tin doping modifies the electronic bandgap and carrier concentration relative to pure PbSe. Lead selenide compounds are valued in the infrared spectrum for their sensitivity in the mid- to long-wavelength regions, and controlled doping with tin allows tuning of detection performance for specific wavelength ranges without requiring cryogenic cooling in some configurations.

infrared photodetectorsthermal imaging sensorsmid-wave IR detectionradiometry instrumentsmilitary/surveillance opticsresearch-grade semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.99Sn0.01Se

Electrical Properties

Regulatory Screening

Environmental

Export Control