Pb0.999Sn0.001Te

semiconductor

· Pb0.999Sn0.001Te

Pb₀.₉₉₉Sn₀.₀₀₁Te is a tin-doped lead telluride semiconductor, a narrow-bandgap IV-VI compound material engineered for infrared detection and thermoelectric applications. This lightly doped variant is primarily a research and specialized industrial material, used where precise control of carrier concentration and band structure is critical for optimizing infrared sensor responsivity or thermoelectric efficiency in cryogenic and room-temperature devices.

infrared detectors and thermal imagingthermoelectric cooling systemscryogenic electronicsresearch semiconductorsnarrow-bandgap optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.999Sn0.001Te

Electrical Properties

Regulatory Screening

Environmental

Export Control