Pb0.97Sn0.03Te

semiconductor

· Pb0.97Sn0.03Te

Pb0.97Sn0.03Te is a lead telluride alloy with a small tin dopant, belonging to the narrow-bandgap semiconductor family commonly used in infrared detection and thermoelectric applications. This material is primarily researched and deployed in thermal imaging systems, infrared sensors, and thermoelectric generators operating in the mid-to-long wavelength infrared spectrum, where its bandgap and carrier properties provide sensitivity advantages over wider-bandgap alternatives. The tin addition modifies the electronic structure relative to pure PbTe, making it valuable for tuning detector response and improving performance in cryogenic or moderate-temperature regimes.

infrared detectors and sensorsthermal imaging systemsthermoelectric devicescryogenic applicationsmilitary/aerospace sensingwavelength-tuned optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.97Sn0.03Te

Electrical Properties

Regulatory Screening

Environmental

Export Control