Pb0.97Se0.97Sn0.03Se0.03

semiconductor

· Pb0.97Se0.97Sn0.03Se0.03

This is a lead-tin selenide alloy, a narrow-bandgap semiconductor belonging to the IV-VI semiconductor family, with tin and selenium dopants incorporated into a lead selenide (PbSe) base matrix. The material is primarily of research interest for infrared (IR) detection and thermal imaging applications, where its narrow bandgap enables sensitivity in the mid- to far-infrared spectral regions at room temperature or with modest cooling. Lead-tin-selenium alloys are notable alternatives to mercury-cadmium-telluride (HgCdTe) systems because they offer reduced toxicity concerns while maintaining strong IR performance, making them attractive for next-generation infrared focal plane arrays and thermal sensors in defense, aerospace, and industrial monitoring applications.

infrared detectorsthermal imaging sensorsfocal plane arraysmid-IR spectroscopydefense/aerospace sensingcryogenic and room-temperature IR optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.97Se0.97Sn0.03Se0.03

Electrical Properties

Regulatory Screening

Environmental

Export Control