Pb0.96TeGa0.04

semiconductor

· Pb0.96TeGa0.04

Pb0.96TeGa0.04 is a narrow-bandgap lead telluride (PbTe)-based semiconductor alloy doped with gallium, belonging to the IV-VI semiconductor family used for infrared detection and thermoelectric applications. This gallium-doped PbTe variant is investigated primarily in research and specialized commercial contexts for mid-wave to long-wave infrared sensing due to its tunable bandgap and favorable carrier dynamics; it offers potential advantages over undoped PbTe in photodetector responsivity and thermal stability for applications requiring precise spectral sensitivity. The material remains largely in the research and niche production phase, competing with mercury cadmium telluride (MCT) and other IR detector materials where cost, manufacturability, or specific performance windows justify its selection over more established alternatives.

infrared photodetectorsthermal imaging sensorsthermoelectric cooling devicesspace-borne IR instrumentationspectroscopy detectorsresearch & development applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.96TeGa0.04

Electrical Properties

Regulatory Screening

Environmental

Export Control