Pb0.95Mn0.05Te is a manganese-doped lead telluride compound semiconductor, where a small fraction of lead sites are substituted with manganese atoms. This material belongs to the IV-VI narrow bandgap semiconductor family and is primarily investigated in research settings for thermoelectric and magnetotransport applications, where the manganese doping introduces magnetic functionality and modifies electronic structure compared to undoped PbTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3700 | eV | — |