Pb0.8Sn0.2Te
semiconductor· Pb0.8Sn0.2Te
Pb₀.₈Sn₀.₂Te is a lead-tin telluride alloy belonging to the IV-VI narrow-bandgap semiconductor family, where partial substitution of lead with tin modulates the electronic properties for mid-infrared applications. This material is primarily developed for infrared detectors, thermal imaging systems, and thermoelectric devices operating in the 3–14 μm wavelength range, offering improved performance over pure PbTe in specific temperature windows and detection scenarios. The tin alloying addition allows engineers to tune the bandgap and lattice constant while maintaining the high carrier mobility and sensitivity characteristic of lead telluride-based compounds.
infrared detectorsthermal imaging sensorsthermoelectric cooling devicesmid-wave infrared (MWIR) systemsspace and military applicationsresearch/specialized optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.