Pb0.8Ge0.2Te

semiconductor

· Pb0.8Ge0.2Te

Pb0.8Ge0.2Te is a lead telluride-based alloy doped with germanium, belonging to the narrow-bandgap semiconductor family used primarily in infrared detection and thermoelectric energy conversion. This material is engineered to optimize band structure and carrier concentration for thermal imaging, night vision systems, and waste heat recovery applications where sensitivity to mid-to-long wavelength infrared radiation is critical. The germanium substitution modifies lattice parameters and electronic properties compared to pure PbTe, making it particularly suited for cryogenic and room-temperature infrared photodetectors where competing materials like HgCdTe may face manufacturing or cost constraints.

infrared photodetectorsthermal imaging sensorsnight vision systemsthermoelectric generatorscryogenic radiation detectionspace-based sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.8Ge0.2Te

Electrical Properties

Regulatory Screening

Environmental

Export Control