Pb0.8Ge0.2Se

semiconductor

· Pb0.8Ge0.2Se

Pb0.8Ge0.2Se is a lead-germanium selenide alloy, a narrow-bandgap semiconductor compound belonging to the IV-VI semiconductor family used primarily in infrared optoelectronic devices. This material is engineered for mid- to far-infrared detection and sensing applications where thermal imaging, gas sensing, and spectroscopy require sensitive response in the 3–15 μm wavelength range. Lead selenide-based alloys like this are valued for their tunable bandgap through germanium doping and superior infrared responsivity compared to conventional silicon or III-V alternatives, making them the preferred choice for low-temperature or cryogenic infrared detectors in scientific instrumentation and thermal imaging systems.

infrared detectorsthermal imaging sensorsmid-infrared spectroscopygas sensing applicationscryogenic photodetectorsscientific instrumentation

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.8Ge0.2Se

Electrical Properties

Regulatory Screening

Environmental

Export Control