Pb0.83Sn0.17Se

semiconductor

· Pb0.83Sn0.17Se

Pb₀.₈₃Sn₀.₁₇Se is a narrow-bandgap semiconductor alloy from the lead-tin-chalcogenide family, combining lead selenide (PbSe) with tin selenide (SnSe) in a pseudobinary composition. This material is primarily explored in infrared optoelectronics and thermoelectric applications, where its tunable bandgap and strong infrared response make it valuable for thermal imaging detectors and waste-heat energy conversion systems. Engineers select this alloy when standard IV-VI semiconductors require bandgap engineering in the mid- to long-wavelength infrared range, though it remains largely a research compound rather than a high-volume industrial standard.

infrared detectorsthermal imaging sensorsthermoelectric generatorsmid-wave IR optoelectronicsbandgap engineering researchlow-temperature IR applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04000	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.83Sn0.17Se

Electrical Properties

Regulatory Screening

Environmental

Export Control