Pb0.7Ge0.3Se

semiconductor

· Pb0.7Ge0.3Se

Pb₀.₇Ge₀.₃Se is a lead-germanium-selenium ternary semiconductor compound belonging to the IV-VI narrow-bandgap family, typically investigated for infrared and thermoelectric applications. This material system is primarily explored in research settings for mid-to-long-wavelength infrared (MWIR/LWIR) detection, thermal imaging sensors, and thermoelectric energy conversion, where its bandgap and carrier mobility characteristics offer advantages over binary lead selenide or lead telluride in specific operating windows. Engineers consider such lead-germanium-selenium alloys when designing compact, high-sensitivity infrared detectors or waste-heat recovery devices operating at moderate to elevated temperatures, though manufacturability and lead content regulations require careful design consideration.

infrared photodetectorsthermal imaging sensorsthermoelectric generatorsresearch semiconductorsnarrow-bandgap materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.7Ge0.3Se

Electrical Properties

Regulatory Screening

Environmental

Export Control