Pb0.65Se0.65Sn0.35Te0.35
semiconductor· Pb0.65Se0.65Sn0.35Te0.35
This is a quaternary lead-tin chalcogenide semiconductor alloy combining lead selenide and lead telluride with tin substitution, belonging to the narrow-gap IV-VI semiconductor family. Such materials are primarily developed for infrared detection and thermal imaging applications where tunable bandgap and high carrier mobility are critical, particularly in the mid-to-long wavelength infrared (MWIR/LWIR) regions. The tin and selenium alloying modifies the bandgap and lattice parameters relative to binary PbTe or PbSe, making this composition relevant for specialized detector systems and thermoelectric applications where performance at elevated or cryogenic temperatures is required.
infrared detectorsthermal imaging sensorsthermoelectric devicesmilitary surveillance systemscryogenic applicationsnarrow-gap semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.