Pb0.01Sn0.99Te

semiconductor

· Pb0.01Sn0.99Te

Pb₀.₀₁Sn₀.₉₉Te is a tin telluride alloy with minimal lead doping, belonging to the IV-VI narrow bandgap semiconductor family commonly used in infrared detection and thermoelectric applications. This composition sits at the lead-rich edge of the PbSnTe solid solution series, where lead substitution is used to fine-tune the bandgap and carrier concentration for specific optoelectronic functions. The material is primarily of research and specialized industrial interest rather than high-volume production, valued for its ability to operate in the mid-to-far infrared spectrum and its potential for thermoelectric energy conversion at moderate temperatures.

infrared detectorsthermal imaging sensorsthermoelectric cooling/power generationnarrow-bandgap semiconductorscryogenic applicationsmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pb0.01Sn0.99Te

Electrical Properties

Regulatory Screening

Environmental

Export Control