PaAs — Properties & Data | MatWorld

PaAs

ceramic

· JVASP-17318· PaAs

Phosphorus arsenide (PaAs) is a binary semiconductor ceramic compound belonging to the III-V compound semiconductor family, characterized by its crystalline structure and electronic properties. It is primarily investigated in research contexts for optoelectronic and high-frequency electronic applications where direct bandgap semiconductors are advantageous. PaAs is notable within the arsenide family for potential use in infrared emitters, detectors, and high-speed devices, though it remains less commercially established than related compounds like GaAs; engineers would consider it when exploring emerging semiconductor materials for specialized photonic or RF applications.

infrared optoelectronicshigh-frequency semiconductorsresearch photonicsdirect bandgap devicescompound semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	17,646.7	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3400	-	DFT · OptB88vdW
Shear Modulus(G)	9,456.5	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.3786	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000196	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000274	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	10.51	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	12.41	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.066	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

PaAs

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental