Pa2P6 is a phosphide-based semiconductor compound in the family of III-V or related semiconducting materials. This material is primarily of research interest for optoelectronic and high-frequency electronic applications where direct bandgap semiconductors are needed. While not yet established in mainstream commercial production, phosphide semiconductors in this composition range are being investigated for next-generation light-emitting devices, photodetectors, and potentially high-speed transistors where performance beyond conventional silicon or gallium arsenide is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01910 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7280 | eV/atom | — |