Pa₂As₄ is a compound semiconductor composed of protactinium and arsenic, belonging to the rare transition metal arsenide family. This material is primarily of research interest rather than established industrial use, with potential applications in exotic optoelectronics, high-energy physics detector materials, and specialized semiconductor devices where unconventional band structures are desirable. Its notable characteristics within the arsenide semiconductor family—combined with the unique properties of protactinium—position it as a candidate for investigating novel electronic and thermal transport phenomena, though practical deployment remains limited by the scarcity and radioactivity of protactinium.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,318.3 | ksi | — | ||
Shear Modulus(G) | 8,915 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9530 | eV/atom | — |